As we move closer to realising 6G, one truth becomes clear—without advancements in semiconductor technology, the ambitious goals of the next generation of wireless won't be met. The latest white paper from the Next G Alliance offers a deep technical dive into the semiconductor needs for future 6G systems, identifying critical gaps and proposing clear directions for innovation.
6G: More Bands, More Demands
6G will operate across a broad spectrum—from below 7 GHz (FR1), through the emerging FR3 (7–24 GHz), and up into the mmWave and D-Band (110–170 GHz). Each band poses unique challenges for power amplifiers, data converters, and RF front-ends, demanding a diverse set of semiconductor technologies tailored for specific frequency ranges and use cases.
Building Blocks and Bottlenecks
Key components in a 6G transceiver include:
- Digital basebands, where AI-native interfaces may necessitate embedded AI accelerators, especially for real-time inference.
- Data converters, like ADCs and DACs, where power efficiency degrades sharply at higher speeds—posing integration and thermal challenges.
- RF front-end modules (FEMs), particularly in transmitters, where output power and efficiency at mmWave and beyond are crucial but difficult to achieve.
In FR3 and higher bands, power amplifier (PA) performance becomes central. Technologies like GaAs, GaN-on-Si, and even InP are being explored, with trade-offs in cost, integration, power output, and thermal performance.
Tech Spotlight: Frequency-Specific Solutions
- FR3 (7–24 GHz):
- GaAs remains strong for lower FR3 bands, but GaN-on-Si is emerging as a cost-effective, high-performance alternative for both handsets and infrastructure.
- CMOS and SOI technologies offer attractive integration benefits for phased arrays in this range.
- FR2 (24–52 GHz):
- PA efficiency continues to be a concern. FDSOI and SiGe technologies are prominent in beamformer ICs due to better performance and integration capabilities.
- D-Band (110–170 GHz):
- A new frontier where InP leads in raw performance (fmax >1 THz), but suffers from cost and integration issues.
- SiGe BiCMOS and GaN-on-Si show promise with ongoing research improving power-added efficiency (PAE) and scaling gate lengths to sub-50 nm.
Heterogeneous Integration: The Path Forward
No single semiconductor platform will suffice for 6G. Instead, the future lies in heterogeneous integration—combining CMOS logic with III-V power devices through 2.5D/3D integration, advanced packaging, and RF interposers. This approach promises the best of both worlds: cost-effective logic with high-performance RF.
Key Recommendations
To support 6G's technical and commercial success, the paper calls for:
- Continued innovation in silicon technologies—CMOS, RFSOI, FDSOI, and SiGe—for integration and efficiency.
- Accelerated development of III-V semiconductors like GaN-on-Si for mid-band power and InP for D-Band applications.
- Industry support for heterogeneous integration of III-V on silicon to combine high performance with scalable, low-cost manufacturing.
Conclusion
6G is shaping up to be not just a wireless revolution but also a semiconductor one. Efficient power handling, extreme frequency operation, AI-driven basebands, and complex beamforming architectures demand innovations across all levels of chip design and integration. As the Next G Alliance rightly concludes, the success of 6G hinges on our ability to combine the best of silicon and compound semiconductors in smarter, smaller, and more power-efficient ways.
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